EDUCATION: Graduated from Department of radio and electronic engineering of Qinghua University in 1961 Major: Semiconductor devices and IC
WORKING EXPERIENCES: She has been principal of project of the National Key Technologies R&D Program, Chief Scientist of State Climbing Plan, member of Consultant Expert Group for the National Key Basic Research projects, member of Academician Presidium of CAS, member of Standing Committee of the Chinese Electronics Society, Director of Semiconductor and Integration Technology Subcommittee, Member of 9th and 10th NPC Standing Committee and Members of the Education, Science, Culture and Public Health Committee.
RESEARCH INTERESTS: She’s mainly engaged in researches on compound semiconductor heterojunction transistor and circuit, which include 0.1 micron GaAs/AlGaAs heterojunction FET with high electron mobility, GaAs/InGaP HBT transistor, and GaN/AlGaN heterojunction FET. GaAs/InGaP HBT light emitting driver has been developed successfully.
HONORS AND AWARDS: 1. Professor Wu put forward an idea to implement the passive coupling between laser and optical fiber by using MEMS structure, which ranked the first at home. A 10Gbps light emission module was developed. The project “advanced deep sub-micron technology and new devices" won the first prize of Science and Technology Award by Beijing Municipal Government in 2003. 2. A full set of 0.8 micron CMOS technology developed independently was rewarded first prize of CAS S&T Progress award in 1998, and second prize of National S&T Progress Awards in 1999 separately. 3. As Chief Scientist of the State Climbing Plan, she took in charge of project "Research on deep sub-micron structure device and mesoscopic physics”, carrying out investigation on 12 subjects, which provided a basis for further study on mesoscopic physics. 4. As the principal on processes, she was succeeded in development and yield improvement of 4K and 16K N-channel MOS RAM. A dew point testing method used for contact hole quality inspection was designed with original creation, which was introduced to the 5th Semiconductor Device factory of Shanghai, and won first prize of scientific and technological achievements of CAS twice in 1980 and 1981. 5. In taking charge of the study on high speed planar switching transistor， Professor Wu solved the key problems in improving switching speed， and this technology was extended to the 5th Semiconductor Device factory of Shanghai and 109 Semiconductor factory of CAS. It provided a basis for the two factories to supply devices needed to build 109 Computer, which is used for "Two Bombs and One Satellite" program. Project of "high speed planar switching transistor" won first prize of National New Product Awards. 6. In 2004， Professor Wu won the Prize for Scientific and Technological Achievements of Ho Leung Ho Lee Foundation.