China's first ZnO nanorod field-effect transistor fabricated in IMECAS
Recently, zinc oxide (ZnO) nanorod field-effect transistor (FET), the first of its kind as a nano device in China, was successfully fabricated by scientists with the Institute of Microelectronics (IME), Chinese Academy of Sciences (CAS).
ZnO is a wide band gap semiconductor and an important multifunctional material. The ZnO nano materials, such as nanowires, nanorods, nanobelts and nanorings, attract intense worldwide attention for their unique optical, semiconducting and piezoelectric properties.
A research group headed by Prof. Zhang Haiying, including Assistant Prof. Xu Jingbo, Doctor Li Ming and Doctor Fu Xiaojun from IME CAS, came up with a "bottom-up" method for designing and developing nano devices. Through the regular contact photolithography technology, they employed ZnO nanorods as the channel material and fabricated a metal-oxide-semiconductor FET by combining gate oxide and back gate metal, which displayed satisfying results.
Next, the group will further improve the performance of the devices, raising solutions to key problems in practical use.